| Manufacturer | |
| Mfr. Part # | NP100P04PDG-E1-AY |
| EBEE Part # | E83281533 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 40V 100A 3.5mΩ@10V,50A 200W 1V@1mA 1 Piece P-Channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6752 | $ 3.6752 |
| 10+ | $3.5832 | $ 35.8320 |
| 30+ | $3.5228 | $ 105.6840 |
| 100+ | $3.4610 | $ 346.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | RENESAS NP100P04PDG-E1-AY | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 5.1mΩ@4.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.13nF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 200W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 15.1nF | |
| Gate Charge(Qg) | 320nC@32V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6752 | $ 3.6752 |
| 10+ | $3.5832 | $ 35.8320 |
| 30+ | $3.5228 | $ 105.6840 |
| 100+ | $3.4610 | $ 346.1000 |
