| Manufacturer | |
| Mfr. Part # | H5N2007FN-E |
| EBEE Part # | E83276779 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 25A 30W 0.036Ω@10V,25A 3V@1mA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.6348 | $ 4.6348 |
| 200+ | $1.7940 | $ 358.8000 |
| 500+ | $1.7319 | $ 865.9500 |
| 1000+ | $1.6999 | $ 1699.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | RENESAS H5N2007FN-E | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.036Ω@10V,25A | |
| Power Dissipation (Pd) | 30W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| Input Capacitance (Ciss@Vds) | 2.2nF@25V | |
| Total Gate Charge (Qg@Vgs) | 56nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.6348 | $ 4.6348 |
| 200+ | $1.7940 | $ 358.8000 |
| 500+ | $1.7319 | $ 865.9500 |
| 1000+ | $1.6999 | $ 1699.9000 |
