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RENESAS H5N2007FN-E


Manufacturer
Mfr. Part #
H5N2007FN-E
EBEE Part #
E83276779
Package
-
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
200V 25A 30W 0.036Ω@10V,25A 3V@1mA MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$4.6348$ 4.6348
200+$1.7940$ 358.8000
500+$1.7319$ 865.9500
1000+$1.6999$ 1699.9000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetRENESAS H5N2007FN-E
RoHS
Operating Temperature-55℃~+150℃
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.036Ω@10V,25A
Power Dissipation (Pd)30W
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Reverse Transfer Capacitance (Crss@Vds)54pF
Input Capacitance (Ciss@Vds)2.2nF@25V
Total Gate Charge (Qg@Vgs)56nC@10V

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