| Manufacturer | |
| Mfr. Part # | 2SK1968-E |
| EBEE Part # | E83282853 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 12A 100W 680mΩ@10V,6A 2V@1mA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.0505 | $ 17.0505 |
| 200+ | $6.5992 | $ 1319.8400 |
| 500+ | $6.3666 | $ 3183.3000 |
| 1000+ | $6.2531 | $ 6253.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | RENESAS 2SK1968-E | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 12A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 680mΩ@10V,6A | |
| Power Dissipation (Pd) | 100W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@1mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| Input Capacitance (Ciss@Vds) | 1.8nF@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.0505 | $ 17.0505 |
| 200+ | $6.5992 | $ 1319.8400 |
| 500+ | $6.3666 | $ 3183.3000 |
| 1000+ | $6.2531 | $ 6253.1000 |
