| Manufacturer | |
| Mfr. Part # | 2SJ216-E |
| EBEE Part # | E83276298 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 35A 50W 60mΩ@10V,18A 1V@1mA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.2627 | $ 7.2627 |
| 200+ | $2.8107 | $ 562.1400 |
| 500+ | $2.7132 | $ 1356.6000 |
| 1000+ | $2.6635 | $ 2663.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | RENESAS 2SJ216-E | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@10V,18A | |
| Power Dissipation (Pd) | 50W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@1mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF@10V | |
| Input Capacitance (Ciss@Vds) | 2.4nF@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.2627 | $ 7.2627 |
| 200+ | $2.8107 | $ 562.1400 |
| 500+ | $2.7132 | $ 1356.6000 |
| 1000+ | $2.6635 | $ 2663.5000 |
