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PIP PTW36N60


Manufacturer
Mfr. Part #
PTW36N60
EBEE Part #
E8575821
Package
TO-3P-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
600V 36A 120mΩ@10V,18A 650W 2V@250uA 1 N-channel TO-3P-3 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.6732$ 2.6732
10+$2.3394$ 23.3940
30+$2.1300$ 63.9000
100+$1.9153$ 191.5300
500+$1.8194$ 909.7000
1000+$1.7769$ 1776.9000
TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetPIP PTW36N60
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)36A
Drain Source On Resistance (RDS(on)@Vgs,Id)120mΩ@10V,18A
Power Dissipation (Pd)650W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)40pF@25V
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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