| Manufacturer | |
| Mfr. Part # | PTA10N80 |
| EBEE Part # | E8343859 |
| Package | TO-220F-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 10A 55W 1Ω@10V,4A 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5166 | $ 0.5166 |
| 10+ | $0.5058 | $ 5.0580 |
| 30+ | $0.4967 | $ 14.9010 |
| 100+ | $0.4894 | $ 48.9400 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | PIP PTA10N80 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 10A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1Ω@10V,4A | |
| Power Dissipation (Pd) | 55W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF@25V | |
| Input Capacitance (Ciss@Vds) | 2.9nF | |
| Total Gate Charge (Qg@Vgs) | 60nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5166 | $ 0.5166 |
| 10+ | $0.5058 | $ 5.0580 |
| 30+ | $0.4967 | $ 14.9010 |
| 100+ | $0.4894 | $ 48.9400 |
