Recommonended For You
Images are for reference only
Add to Favourites

PIP PSD04N65B


Manufacturer
Mfr. Part #
PSD04N65B
EBEE Part #
E8343863
Package
TO-252-2
Customer #
Datasheet
EDA Models
ECCN
-
Description
650V 4A 2.5Ω@10V,2A 86W 4V@250uA 1 N-channel TO-252-2 MOSFETs ROHS
This materials supports customized cables!
Learn more >>

In Stock : Please Inquire

Please send RFQ , we will respond immediately.

Contact Name
Business Email
Company Name
Country
Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.2029$ 0.2029
10+$0.1671$ 1.6710
30+$0.1518$ 4.5540
100+$0.1326$ 13.2600
500+$0.1241$ 62.0500
1000+$0.1190$ 119.0000
2500+$0.1178$ 294.5000
5000+$0.1168$ 584.0000
TypeDescription
Select All
CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetPIP PSD04N65B
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5Ω@10V,2A
Power Dissipation (Pd)86W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)6pF@25V
Input Capacitance (Ciss@Vds)450pF
Total Gate Charge (Qg@Vgs)8.5nC@325V

Shopping Guide

Expand