| Manufacturer | |
| Mfr. Part # | USB10H |
| EBEE Part # | E83290080 |
| Package | SuperSOT-6 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 1.9A 960mW 0.17Ω@4.5V,1.9A 900mV@250uA 2 P-Channel SuperSOT-6 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2286 | $ 0.2286 |
| 200+ | $0.0886 | $ 17.7200 |
| 500+ | $0.0854 | $ 42.7000 |
| 1000+ | $0.0838 | $ 83.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi USB10H | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 2 P-Channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 1.9A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.17Ω@4.5V,1.9A | |
| Power Dissipation (Pd) | 960mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 900mV@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Input Capacitance (Ciss@Vds) | 441pF@10V | |
| Total Gate Charge (Qg@Vgs) | 4.2nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2286 | $ 0.2286 |
| 200+ | $0.0886 | $ 17.7200 |
| 500+ | $0.0854 | $ 42.7000 |
| 1000+ | $0.0838 | $ 83.8000 |
