| Manufacturer | |
| Mfr. Part # | MCH6601-TL-E |
| EBEE Part # | E83276301 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 200mA 800mW 10.4Ω@4V,50mA 1.4V@100uA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1143 | $ 0.1143 |
| 200+ | $0.0443 | $ 8.8600 |
| 500+ | $0.0427 | $ 21.3500 |
| 1000+ | $0.0420 | $ 42.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi MCH6601-TL-E | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 200mA | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10.4Ω@4V,50mA | |
| Power Dissipation (Pd) | 800mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.4V@100uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF@10V | |
| Input Capacitance (Ciss@Vds) | 7.5pF@10V | |
| Total Gate Charge (Qg@Vgs) | 1.43nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1143 | $ 0.1143 |
| 200+ | $0.0443 | $ 8.8600 |
| 500+ | $0.0427 | $ 21.3500 |
| 1000+ | $0.0420 | $ 42.0000 |
