| Manufacturer | |
| Mfr. Part # | FDP032N08B |
| EBEE Part # | E83275909 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 211A 263W 3.3mΩ@10V,100A 4.5V@250uA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.3022 | $ 3.3022 |
| 200+ | $1.2777 | $ 255.5400 |
| 500+ | $1.2333 | $ 616.6500 |
| 1000+ | $1.2120 | $ 1212.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDP032N08B | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Drain Source Voltage (Vdss) | 80V | |
| Continuous Drain Current (Id) | 211A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.3mΩ@10V,100A | |
| Power Dissipation (Pd) | 263W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF@40V | |
| Input Capacitance (Ciss@Vds) | 10.965nF@40V | |
| Total Gate Charge (Qg@Vgs) | 144nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.3022 | $ 3.3022 |
| 200+ | $1.2777 | $ 255.5400 |
| 500+ | $1.2333 | $ 616.6500 |
| 1000+ | $1.2120 | $ 1212.0000 |
