| Manufacturer | |
| Mfr. Part # | FDMS8880 |
| EBEE Part # | E8891109 |
| Package | Power-56-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 51A 6.3mΩ@10V,13.5A 42W 1.9V@250uA 1 N-channel Power-56-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9828 | $ 0.9828 |
| 200+ | $0.3811 | $ 76.2200 |
| 500+ | $0.3683 | $ 184.1500 |
| 1000+ | $0.3611 | $ 361.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDMS8880 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 51A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.3mΩ@10V,13.5A | |
| Power Dissipation (Pd) | 42W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.9V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 161pF@15V | |
| Input Capacitance (Ciss@Vds) | 1.195nF@15V | |
| Total Gate Charge (Qg@Vgs) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9828 | $ 0.9828 |
| 200+ | $0.3811 | $ 76.2200 |
| 500+ | $0.3683 | $ 184.1500 |
| 1000+ | $0.3611 | $ 361.1000 |
