| Manufacturer | |
| Mfr. Part # | FDMS86200 |
| EBEE Part # | E8128799 |
| Package | PDFN-8(4.9x5.8) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 150V 35A 21mΩ@6V,8.8A 104W 4V@250uA 1 N-channel PDFN-8(4.9x5.8) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0942 | $ 1.0942 |
| 10+ | $0.9052 | $ 9.0520 |
| 30+ | $0.8010 | $ 24.0300 |
| 100+ | $0.6825 | $ 68.2500 |
| 500+ | $0.6312 | $ 315.6000 |
| 1000+ | $0.6072 | $ 607.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDMS86200 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 21mΩ@6V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 104W | |
| Drain to Source Voltage | 150V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 2.715nF | |
| Output Capacitance(Coss) | 270pF | |
| Gate Charge(Qg) | 46nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0942 | $ 1.0942 |
| 10+ | $0.9052 | $ 9.0520 |
| 30+ | $0.8010 | $ 24.0300 |
| 100+ | $0.6825 | $ 68.2500 |
| 500+ | $0.6312 | $ 315.6000 |
| 1000+ | $0.6072 | $ 607.2000 |
