Recommonended For You
Images are for reference only
Add to Favourites
onsemi FDMS3669S
| Manufacturer | |
| Mfr. Part # | FDMS3669S |
| EBEE Part # | E8891058 |
| Package | Power-56-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 1W 10mΩ@10V,13A 2.7V@250uA 2 N-Channel Power-56-8 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5780 | $ 1.5780 |
| 10+ | $1.3384 | $ 13.3840 |
| 30+ | $1.2053 | $ 36.1590 |
| 100+ | $1.0562 | $ 105.6200 |
| 500+ | $0.9905 | $ 495.2500 |
| 1000+ | $0.9604 | $ 960.4000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datasheet | onsemi FDMS3669S | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 2 N-Channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 13A;18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,13A | |
| Power Dissipation (Pd) | 1W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.605nF@15V | |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5780 | $ 1.5780 |
| 10+ | $1.3384 | $ 13.3840 |
| 30+ | $1.2053 | $ 36.1590 |
| 100+ | $1.0562 | $ 105.6200 |
| 500+ | $0.9905 | $ 495.2500 |
| 1000+ | $0.9604 | $ 960.4000 |
