| Manufacturer | |
| Mfr. Part # | FDMD8630 |
| EBEE Part # | E8890988 |
| Package | PQFN-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 1mΩ@10V,38A 3V@250uA 2 N-Channel PQFN-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.8700 | $ 4.8700 |
| 200+ | $1.8853 | $ 377.0600 |
| 500+ | $1.8196 | $ 909.8000 |
| 1000+ | $1.7869 | $ 1786.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDMD8630 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 2 N-Channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 38A;167A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1mΩ@10V,38A | |
| Power Dissipation (Pd) | 2.3W;43W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Input Capacitance (Ciss@Vds) | 9.93nF@15V | |
| Total Gate Charge (Qg@Vgs) | 142nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.8700 | $ 4.8700 |
| 200+ | $1.8853 | $ 377.0600 |
| 500+ | $1.8196 | $ 909.8000 |
| 1000+ | $1.7869 | $ 1786.9000 |
