| Manufacturer | |
| Mfr. Part # | FDMC86160 |
| EBEE Part # | E8605029 |
| Package | Power-33 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 43A 14mΩ@10V,9A 54W 2.9V@250uA 1 N-channel Power-33 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.5374 | $ 2.5374 |
| 10+ | $2.1688 | $ 21.6880 |
| 30+ | $1.9373 | $ 58.1190 |
| 100+ | $1.7011 | $ 170.1100 |
| 500+ | $1.5940 | $ 797.0000 |
| 1000+ | $1.5483 | $ 1548.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDMC86160 | |
| RoHS | ||
| RDS(on) | 14mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Current - Continuous Drain(Id) | 43A | |
| Ciss-Input Capacitance | 1.29nF | |
| Gate Charge(Qg) | 22nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.5374 | $ 2.5374 |
| 10+ | $2.1688 | $ 21.6880 |
| 30+ | $1.9373 | $ 58.1190 |
| 100+ | $1.7011 | $ 170.1100 |
| 500+ | $1.5940 | $ 797.0000 |
| 1000+ | $1.5483 | $ 1548.3000 |
