| Manufacturer | |
| Mfr. Part # | FDMC3612 |
| EBEE Part # | E8455160 |
| Package | Power-33 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 12A 110mΩ@10V,3.3A 35W 4V@250uA 1 N-channel Power-33 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6492 | $ 0.6492 |
| 10+ | $0.5407 | $ 5.4070 |
| 30+ | $0.4849 | $ 14.5470 |
| 100+ | $0.4323 | $ 43.2300 |
| 500+ | $0.3812 | $ 190.6000 |
| 1000+ | $0.3637 | $ 363.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDMC3612 | |
| RoHS | ||
| RDS(on) | 110mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 880pF | |
| Gate Charge(Qg) | 21nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6492 | $ 0.6492 |
| 10+ | $0.5407 | $ 5.4070 |
| 30+ | $0.4849 | $ 14.5470 |
| 100+ | $0.4323 | $ 43.2300 |
| 500+ | $0.3812 | $ 190.6000 |
| 1000+ | $0.3637 | $ 363.7000 |
