| Manufacturer | |
| Mfr. Part # | FDM3622 |
| EBEE Part # | E8890886 |
| Package | WDFN-8(3.3x3.3) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 4.4A 60mΩ@10V,4.4A 2.1W 4V@250uA 1 N-channel WDFN-8(3.3x3.3) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4074 | $ 1.4074 |
| 10+ | $1.1525 | $ 11.5250 |
| 30+ | $1.0117 | $ 30.3510 |
| 100+ | $0.8533 | $ 85.3300 |
| 500+ | $0.7837 | $ 391.8500 |
| 1000+ | $0.7520 | $ 752.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | onsemi FDM3622 | |
| RoHS | ||
| RDS(on) | 60mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.1W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Ciss-Input Capacitance | 1.09nF | |
| Gate Charge(Qg) | 17nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4074 | $ 1.4074 |
| 10+ | $1.1525 | $ 11.5250 |
| 30+ | $1.0117 | $ 30.3510 |
| 100+ | $0.8533 | $ 85.3300 |
| 500+ | $0.7837 | $ 391.8500 |
| 1000+ | $0.7520 | $ 752.0000 |
