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NXP Semicon BC856B/DG/B3235


Manufacturer
Mfr. Part #
BC856B/DG/B3235
EBEE Part #
E83201064
Package
TO-236AB
Customer #
EDA Models
ECCN
EAR99
Description
65V 250mW 125@2mA,5V 100mA PNP TO-236AB Bipolar (BJT) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.0608$ 0.0608
200+$0.0236$ 4.7200
500+$0.0228$ 11.4000
1000+$0.0223$ 22.3000
TypeDescription
Select All
CategoryTransistors/Thyristors ,Bipolar (BJT)
RoHS
Operating Temperature-
Collector Current (Ic)100mA
Power Dissipation (Pd)250mW
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)65V
DC Current Gain (hFE@Ic,Vce)125@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@100mA,5mA
Transistor typePNP

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