| Manufacturer | |
| Mfr. Part # | A3G26H200W17SR3 |
| EBEE Part # | E83288699 |
| Package | NI-780S-4S2S |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | NI-780S-4S2S GaN Transistors(GaN HEMT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $239.8924 | $ 239.8924 |
| 250+ | $92.8358 | $ 23208.9500 |
| 500+ | $89.5727 | $ 44786.3500 |
| 1000+ | $87.9614 | $ 87961.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | NXP Semicon A3G26H200W17SR3 | |
| RoHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $239.8924 | $ 239.8924 |
| 250+ | $92.8358 | $ 23208.9500 |
| 500+ | $89.5727 | $ 44786.3500 |
| 1000+ | $87.9614 | $ 87961.4000 |
