| Manufacturer | |
| Mfr. Part # | NTE66 |
| EBEE Part # | E85833819 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 14A 77W 160mΩ@10V,8.3A 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.2846 | $ 16.2846 |
| 200+ | $6.4982 | $ 1299.6400 |
| 500+ | $6.2804 | $ 3140.2000 |
| 1000+ | $6.1740 | $ 6174.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | NTE Electronics NTE66 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 14A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 160mΩ@10V,8.3A | |
| Power Dissipation (Pd) | 77W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF@25V | |
| Input Capacitance (Ciss@Vds) | 640pF@25V | |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.2846 | $ 16.2846 |
| 200+ | $6.4982 | $ 1299.6400 |
| 500+ | $6.2804 | $ 3140.2000 |
| 1000+ | $6.1740 | $ 6174.0000 |
