| Manufacturer | |
| Mfr. Part # | NTE24 |
| EBEE Part # | E87015825 |
| Package | TO-237 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 850mW 40@250mA,2V 1A NPN TO-237 Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2276 | $ 3.2276 |
| 200+ | $1.2879 | $ 257.5800 |
| 500+ | $1.2461 | $ 623.0500 |
| 1000+ | $1.2235 | $ 1223.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datasheet | NTE Electronics NTE24 | |
| RoHS | ||
| Collector Current (Ic) | 1A | |
| Power Dissipation (Pd) | 850mW | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V | |
| DC Current Gain (hFE@Ic,Vce) | 40@250mA,2V | |
| Transition Frequency (fT) | 50MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@100mA,1A | |
| Transistor type | NPN |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2276 | $ 3.2276 |
| 200+ | $1.2879 | $ 257.5800 |
| 500+ | $1.2461 | $ 623.0500 |
| 1000+ | $1.2235 | $ 1223.5000 |
