| Manufacturer | |
| Mfr. Part # | NTE2385 |
| EBEE Part # | E85816578 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 500V 8A 125W 850mΩ@10V,4.8A 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.1404 | $ 18.1404 |
| 200+ | $7.2388 | $ 1447.7600 |
| 500+ | $6.9966 | $ 3498.3000 |
| 1000+ | $6.8780 | $ 6878.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | NTE Electronics NTE2385 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 500V | |
| Continuous Drain Current (Id) | 8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 850mΩ@10V,4.8A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V | |
| Total Gate Charge (Qg@Vgs) | 63nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.1404 | $ 18.1404 |
| 200+ | $7.2388 | $ 1447.7600 |
| 500+ | $6.9966 | $ 3498.3000 |
| 1000+ | $6.8780 | $ 6878.0000 |
