| Manufacturer | |
| Mfr. Part # | NTE2384 |
| EBEE Part # | E87015816 |
| Package | TO-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 900V 6A 180W 1.4Ω@10V,3A 4.5V@250uA 1 N-channel TO-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $128.4484 | $ 128.4484 |
| 200+ | $51.2532 | $ 10250.6400 |
| 500+ | $49.5402 | $ 24770.1000 |
| 1000+ | $48.6932 | $ 48693.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | NTE Electronics NTE2384 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 900V | |
| Continuous Drain Current (Id) | 6A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@10V,3A | |
| Power Dissipation (Pd) | 180W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF@25V | |
| Input Capacitance (Ciss@Vds) | 2.6nF@25V | |
| Total Gate Charge (Qg@Vgs) | 130nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $128.4484 | $ 128.4484 |
| 200+ | $51.2532 | $ 10250.6400 |
| 500+ | $49.5402 | $ 24770.1000 |
| 1000+ | $48.6932 | $ 48693.2000 |
