| Manufacturer | |
| Mfr. Part # | NTE2372 |
| EBEE Part # | E85816566 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 3.5A 1.5Ω@10V,1.5A 40W 4V@250uA 1 Piece P-Channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.2310 | $ 11.2310 |
| 200+ | $4.4820 | $ 896.4000 |
| 500+ | $4.3322 | $ 2166.1000 |
| 1000+ | $4.2589 | $ 4258.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | NTE Electronics NTE2372 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 3.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.5Ω@10V,1.5A | |
| Power Dissipation (Pd) | 40W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF@25V | |
| Input Capacitance (Ciss@Vds) | 350pF@25V | |
| Total Gate Charge (Qg@Vgs) | 22nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.2310 | $ 11.2310 |
| 200+ | $4.4820 | $ 896.4000 |
| 500+ | $4.3322 | $ 2166.1000 |
| 1000+ | $4.2589 | $ 4258.9000 |
