| Manufacturer | |
| Mfr. Part # | NTE227 |
| EBEE Part # | E86721699 |
| Package | TO-237 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 300V 850mW 40@10mA,10V 100mA NPN TO-237 Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.7243 | $ 7.7243 |
| 200+ | $3.0832 | $ 616.6400 |
| 500+ | $2.9803 | $ 1490.1500 |
| 1000+ | $2.9280 | $ 2928.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datasheet | NTE Electronics NTE227 | |
| RoHS | ||
| Collector Current (Ic) | 100mA | |
| Power Dissipation (Pd) | 850mW | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 300V | |
| DC Current Gain (hFE@Ic,Vce) | 40@10mA,10V | |
| Transition Frequency (fT) | 200MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@2mA,20mA | |
| Transistor type | NPN |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.7243 | $ 7.7243 |
| 200+ | $3.0832 | $ 616.6400 |
| 500+ | $2.9803 | $ 1490.1500 |
| 1000+ | $2.9280 | $ 2928.0000 |
