| Manufacturer | |
| Mfr. Part # | 2N3019 |
| EBEE Part # | E85503501 |
| Package | TO-39 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 800mW 100@150mA,10V 1A NPN TO-39 Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7394 | $ 2.7394 |
| 200+ | $1.0945 | $ 218.9000 |
| 500+ | $1.0578 | $ 528.9000 |
| 1000+ | $1.0387 | $ 1038.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datasheet | NTE Electronics 2N3019 | |
| RoHS | ||
| Collector Current (Ic) | 1A | |
| Power Dissipation (Pd) | 800mW | |
| Collector Cut-Off Current (Icbo) | 10nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V | |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA,10V | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@50mA,500mA | |
| Transistor type | NPN |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7394 | $ 2.7394 |
| 200+ | $1.0945 | $ 218.9000 |
| 500+ | $1.0578 | $ 528.9000 |
| 1000+ | $1.0387 | $ 1038.7000 |
