| Manufacturer | |
| Mfr. Part # | PA910BD |
| EBEE Part # | E8532968 |
| Package | TO-252-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 8.1A 190mΩ@10V,3A 15W 2.3V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1760 | $ 0.1760 |
| 10+ | $0.1402 | $ 1.4020 |
| 30+ | $0.1249 | $ 3.7470 |
| 100+ | $0.1057 | $ 10.5700 |
| 500+ | $0.0972 | $ 48.6000 |
| 1000+ | $0.0921 | $ 92.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | NIKO Semicon PA910BD | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 8.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 190mΩ@10V,3A | |
| Power Dissipation (Pd) | 15W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF@25V | |
| Input Capacitance (Ciss@Vds) | 306pF@25V | |
| Total Gate Charge (Qg@Vgs) | 8.6nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1760 | $ 0.1760 |
| 10+ | $0.1402 | $ 1.4020 |
| 30+ | $0.1249 | $ 3.7470 |
| 100+ | $0.1057 | $ 10.5700 |
| 500+ | $0.0972 | $ 48.6000 |
| 1000+ | $0.0921 | $ 92.1000 |
