| Manufacturer | |
| Mfr. Part # | PA410BD |
| EBEE Part # | E8532967 |
| Package | TO-252-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 10A 140mΩ@10V,5A 35W 2.3V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2888 | $ 1.4440 |
| 50+ | $0.2379 | $ 11.8950 |
| 150+ | $0.2162 | $ 32.4300 |
| 500+ | $0.1891 | $ 94.5500 |
| 2500+ | $0.1555 | $ 388.7500 |
| 5000+ | $0.1481 | $ 740.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | NIKO Semicon PA410BD | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 10A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 140mΩ@10V,5A | |
| Power Dissipation (Pd) | 35W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF@25V | |
| Input Capacitance (Ciss@Vds) | 330pF@25V | |
| Total Gate Charge (Qg@Vgs) | 8.6nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2888 | $ 1.4440 |
| 50+ | $0.2379 | $ 11.8950 |
| 150+ | $0.2162 | $ 32.4300 |
| 500+ | $0.1891 | $ 94.5500 |
| 2500+ | $0.1555 | $ 388.7500 |
| 5000+ | $0.1481 | $ 740.5000 |
