| Manufacturer | |
| Mfr. Part # | IRF640NS |
| EBEE Part # | E819272231 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 200V 18A 130mΩ@10V,7.5A 130W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4891 | $ 0.4891 |
| 10+ | $0.3938 | $ 3.9380 |
| 30+ | $0.3525 | $ 10.5750 |
| 100+ | $0.3001 | $ 30.0100 |
| 500+ | $0.2604 | $ 130.2000 |
| 800+ | $0.2461 | $ 196.8800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Minos IRF640NS | |
| RoHS | ||
| RDS(on) | 130mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 130W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.32nF | |
| Gate Charge(Qg) | 23nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4891 | $ 0.4891 |
| 10+ | $0.3938 | $ 3.9380 |
| 30+ | $0.3525 | $ 10.5750 |
| 100+ | $0.3001 | $ 30.0100 |
| 500+ | $0.2604 | $ 130.2000 |
| 800+ | $0.2461 | $ 196.8800 |
