| Manufacturer | |
| Mfr. Part # | MEM4N60A3G |
| EBEE Part # | E8558567 |
| Package | TO-220F-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 600V 4A 2.3Ω@10V,2A 33W 2.8V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4262 | $ 0.4262 |
| 10+ | $0.3466 | $ 3.4660 |
| 50+ | $0.2936 | $ 14.6800 |
| 100+ | $0.2512 | $ 25.1200 |
| 500+ | $0.2335 | $ 116.7500 |
| 1000+ | $0.2210 | $ 221.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | MICRONE(Nanjing Micro One Elec) MEM4N60A3G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.3Ω@10V,2A | |
| Power Dissipation (Pd) | 33W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.8V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.7pF | |
| Input Capacitance (Ciss@Vds) | 676pF@25V | |
| Total Gate Charge (Qg@Vgs) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4262 | $ 0.4262 |
| 10+ | $0.3466 | $ 3.4660 |
| 50+ | $0.2936 | $ 14.6800 |
| 100+ | $0.2512 | $ 25.1200 |
| 500+ | $0.2335 | $ 116.7500 |
| 1000+ | $0.2210 | $ 221.0000 |
