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MICRONE(Nanjing Micro One Elec) MEM4N60A3G


Manufacturer
Mfr. Part #
MEM4N60A3G
EBEE Part #
E8558567
Package
TO-220F-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
600V 4A 2.3Ω@10V,2A 33W 2.8V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.4262$ 0.4262
10+$0.3466$ 3.4660
50+$0.2936$ 14.6800
100+$0.2512$ 25.1200
500+$0.2335$ 116.7500
1000+$0.2210$ 221.0000
TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetMICRONE(Nanjing Micro One Elec) MEM4N60A3G
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3Ω@10V,2A
Power Dissipation (Pd)33W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)19.7pF
Input Capacitance (Ciss@Vds)676pF@25V
Total Gate Charge (Qg@Vgs)-

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