| Manufacturer | |
| Mfr. Part # | JANSD2N2222AUA |
| EBEE Part # | E86884123 |
| Package | SMD-4P |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 50V 650mW 100@150mA,10V 800mA NPN SMD-4P Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $551.0854 | $ 551.0854 |
| 200+ | $219.8879 | $ 43977.5800 |
| 500+ | $212.5402 | $ 106270.1000 |
| 1000+ | $208.9082 | $ 208908.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| RoHS | ||
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Collector Current (Ic) | 800mA | |
| Power Dissipation (Pd) | 650mW | |
| Collector Cut-Off Current (Icbo) | 50nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V | |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA,10V | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@50mA,500mA | |
| Transistor type | NPN |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $551.0854 | $ 551.0854 |
| 200+ | $219.8879 | $ 43977.5800 |
| 500+ | $212.5402 | $ 106270.1000 |
| 1000+ | $208.9082 | $ 208908.2000 |
