| Manufacturer | |
| Mfr. Part # | APTM50H10FT3G |
| EBEE Part # | E817536902 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 500V 37A 120mΩ@10V,18.5A 312W 5V@1mA 4 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $272.8208 | $ 272.8208 |
| 200+ | $108.8584 | $ 21771.6800 |
| 500+ | $105.2196 | $ 52609.8000 |
| 1000+ | $103.4238 | $ 103423.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 4 N-channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 500V | |
| Continuous Drain Current (Id) | 37A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 120mΩ@10V,18.5A | |
| Power Dissipation (Pd) | 312W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@1mA | |
| Input Capacitance (Ciss@Vds) | 4.367nF@25V | |
| Total Gate Charge (Qg@Vgs) | 96nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $272.8208 | $ 272.8208 |
| 200+ | $108.8584 | $ 21771.6800 |
| 500+ | $105.2196 | $ 52609.8000 |
| 1000+ | $103.4238 | $ 103423.8000 |
