| Manufacturer | |
| Mfr. Part # | APTM50DAM17G |
| EBEE Part # | E85589030 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 500V 180A 1.25kW 20mΩ@10V,90A 3V@10mA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $735.3949 | $ 735.3949 |
| 200+ | $293.4283 | $ 58685.6600 |
| 500+ | $283.6227 | $ 141811.3500 |
| 1000+ | $278.7782 | $ 278778.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APTM50DAM17G | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 500V | |
| Continuous Drain Current (Id) | 180A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,90A | |
| Power Dissipation (Pd) | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@10mA | |
| Input Capacitance (Ciss@Vds) | 28nF@25V | |
| Total Gate Charge (Qg@Vgs) | 560nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $735.3949 | $ 735.3949 |
| 200+ | $293.4283 | $ 58685.6600 |
| 500+ | $283.6227 | $ 141811.3500 |
| 1000+ | $278.7782 | $ 278778.2000 |
