| Manufacturer | |
| Mfr. Part # | APTM20DAM05G |
| EBEE Part # | E86746454 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 317A 1.136kW 6mΩ@10V,158.5A 3V@10mA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $748.2677 | $ 748.2677 |
| 200+ | $298.5646 | $ 59712.9200 |
| 500+ | $288.5870 | $ 144293.5000 |
| 1000+ | $283.6582 | $ 283658.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APTM20DAM05G | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 317A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@10V,158.5A | |
| Power Dissipation (Pd) | 1.136kW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@10mA | |
| Input Capacitance (Ciss@Vds) | 27.4nF@25V | |
| Total Gate Charge (Qg@Vgs) | 448nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $748.2677 | $ 748.2677 |
| 200+ | $298.5646 | $ 59712.9200 |
| 500+ | $288.5870 | $ 144293.5000 |
| 1000+ | $283.6582 | $ 283658.2000 |
