| Manufacturer | |
| Mfr. Part # | APTM120U10SAG |
| EBEE Part # | E85589024 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 116A 120mΩ@10V,58A 3.29kW 3V@20mA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1,068.2126 | $ 1068.2126 |
| 200+ | $426.2242 | $ 85244.8400 |
| 500+ | $411.9820 | $ 205991.0000 |
| 1000+ | $404.9436 | $ 404943.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APTM120U10SAG | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 116A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 120mΩ@10V,58A | |
| Power Dissipation (Pd) | 3.29kW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@20mA | |
| Input Capacitance (Ciss@Vds) | 28.9nF@25V | |
| Total Gate Charge (Qg@Vgs) | 1.1uC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1,068.2126 | $ 1068.2126 |
| 200+ | $426.2242 | $ 85244.8400 |
| 500+ | $411.9820 | $ 205991.0000 |
| 1000+ | $404.9436 | $ 404943.6000 |
