| Manufacturer | |
| Mfr. Part # | APTM120DA30T1G |
| EBEE Part # | E86125236 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 31A 360mΩ@10V,25A 360W [email protected] 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $221.9715 | $ 221.9715 |
| 200+ | $88.5691 | $ 17713.8200 |
| 500+ | $85.6084 | $ 42804.2000 |
| 1000+ | $84.1463 | $ 84146.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APTM120DA30T1G | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 31A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 360mΩ@10V,25A | |
| Power Dissipation (Pd) | 360W | |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] | |
| Input Capacitance (Ciss@Vds) | 14.56nF@25V | |
| Total Gate Charge (Qg@Vgs) | 560nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $221.9715 | $ 221.9715 |
| 200+ | $88.5691 | $ 17713.8200 |
| 500+ | $85.6084 | $ 42804.2000 |
| 1000+ | $84.1463 | $ 84146.3000 |
