| Manufacturer | |
| Mfr. Part # | APTM10SKM02G |
| EBEE Part # | E87077517 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 495A 2.5mΩ@10V,200A 1.25kW 4V@10mA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $748.9847 | $ 748.9847 |
| 200+ | $298.8508 | $ 59770.1600 |
| 500+ | $288.8633 | $ 144431.6500 |
| 1000+ | $283.9297 | $ 283929.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APTM10SKM02G | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 495A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5mΩ@10V,200A | |
| Power Dissipation (Pd) | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@10mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9pF@25V | |
| Input Capacitance (Ciss@Vds) | 40nF@25V | |
| Total Gate Charge (Qg@Vgs) | 1.36uC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $748.9847 | $ 748.9847 |
| 200+ | $298.8508 | $ 59770.1600 |
| 500+ | $288.8633 | $ 144431.6500 |
| 1000+ | $283.9297 | $ 283929.7000 |
