| Manufacturer | |
| Mfr. Part # | APTM10HM19FT3G |
| EBEE Part # | E817677655 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 70A 21mΩ@10V,35A 208W 4V@1mA 4 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $284.5192 | $ 284.5192 |
| 200+ | $113.5249 | $ 22704.9800 |
| 500+ | $109.7310 | $ 54865.5000 |
| 1000+ | $107.8568 | $ 107856.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 4 N-channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 70A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@10V,35A | |
| Power Dissipation (Pd) | 208W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@1mA | |
| Input Capacitance (Ciss@Vds) | 5.1nF@25V | |
| Total Gate Charge (Qg@Vgs) | 200nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $284.5192 | $ 284.5192 |
| 200+ | $113.5249 | $ 22704.9800 |
| 500+ | $109.7310 | $ 54865.5000 |
| 1000+ | $107.8568 | $ 107856.8000 |
