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Microchip Tech APTM100H45FT3G
| Manufacturer | |
| Mfr. Part # | APTM100H45FT3G |
| EBEE Part # | E817547533 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1kV 18A 540mΩ@10V,9A 357W [email protected] 4 N-channel MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $349.1828 | $ 349.1828 |
| 200+ | $139.3272 | $ 27865.4400 |
| 500+ | $134.6712 | $ 67335.6000 |
| 1000+ | $132.3702 | $ 132370.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datasheet | MICROCHIP APTM100H45FT3G | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 4 N-channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 1kV | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 540mΩ@10V,9A | |
| Power Dissipation (Pd) | 357W | |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] | |
| Input Capacitance (Ciss@Vds) | 4.35nF@25V | |
| Total Gate Charge (Qg@Vgs) | 154nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $349.1828 | $ 349.1828 |
| 200+ | $139.3272 | $ 27865.4400 |
| 500+ | $134.6712 | $ 67335.6000 |
| 1000+ | $132.3702 | $ 132370.2000 |
