| Manufacturer | |
| Mfr. Part # | APTM100H35FT3G |
| EBEE Part # | E817426965 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1kV 22A 420mΩ@10V,11A 390W [email protected] 4 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $372.9141 | $ 372.9141 |
| 200+ | $148.7960 | $ 29759.2000 |
| 500+ | $143.8230 | $ 71911.5000 |
| 1000+ | $141.3670 | $ 141367.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 4 N-channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 1kV | |
| Continuous Drain Current (Id) | 22A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 420mΩ@10V,11A | |
| Power Dissipation (Pd) | 390W | |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] | |
| Input Capacitance (Ciss@Vds) | 5.2nF@25V | |
| Total Gate Charge (Qg@Vgs) | 186nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $372.9141 | $ 372.9141 |
| 200+ | $148.7960 | $ 29759.2000 |
| 500+ | $143.8230 | $ 71911.5000 |
| 1000+ | $141.3670 | $ 141367.0000 |
