| Manufacturer | |
| Mfr. Part # | APTM100A13DG |
| EBEE Part # | E817570354 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1kV 65A 1.25kW 156mΩ@10V,32.5A 5V@6mA 2 N-Channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $895.6047 | $ 895.6047 |
| 200+ | $357.3522 | $ 71470.4400 |
| 500+ | $345.4116 | $ 172705.8000 |
| 1000+ | $339.5101 | $ 339510.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 2 N-Channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 1kV | |
| Continuous Drain Current (Id) | 65A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 156mΩ@10V,32.5A | |
| Power Dissipation (Pd) | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@6mA | |
| Input Capacitance (Ciss@Vds) | 15.2nF@25V | |
| Total Gate Charge (Qg@Vgs) | 562nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $895.6047 | $ 895.6047 |
| 200+ | $357.3522 | $ 71470.4400 |
| 500+ | $345.4116 | $ 172705.8000 |
| 1000+ | $339.5101 | $ 339510.1000 |
