| Manufacturer | |
| Mfr. Part # | APTC80H15T3G |
| EBEE Part # | E817281375 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 28A 150mΩ@10V,14A 277W 3.9V@2mA 4 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $305.4183 | $ 305.4183 |
| 200+ | $121.8649 | $ 24372.9800 |
| 500+ | $117.7924 | $ 58896.2000 |
| 1000+ | $115.7806 | $ 115780.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 4 N-channel | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 28A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 150mΩ@10V,14A | |
| Power Dissipation (Pd) | 277W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.9V@2mA | |
| Input Capacitance (Ciss@Vds) | 4.507nF@25V | |
| Total Gate Charge (Qg@Vgs) | 180nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $305.4183 | $ 305.4183 |
| 200+ | $121.8649 | $ 24372.9800 |
| 500+ | $117.7924 | $ 58896.2000 |
| 1000+ | $115.7806 | $ 115780.6000 |
