| Manufacturer | |
| Mfr. Part # | APT32M80J |
| EBEE Part # | E85588972 |
| Package | SOT-227B-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 33A 543W 190mΩ@10V,24A [email protected] 1 N-channel SOT-227B-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $101.7169 | $ 101.7169 |
| 200+ | $40.5867 | $ 8117.3400 |
| 500+ | $39.2310 | $ 19615.5000 |
| 1000+ | $38.5602 | $ 38560.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APT32M80J | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 33A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 190mΩ@10V,24A | |
| Power Dissipation (Pd) | 543W | |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] | |
| Reverse Transfer Capacitance (Crss@Vds) | 159pF@800V | |
| Input Capacitance (Ciss@Vds) | 9326pF@800V | |
| Total Gate Charge (Qg@Vgs) | 303nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $101.7169 | $ 101.7169 |
| 200+ | $40.5867 | $ 8117.3400 |
| 500+ | $39.2310 | $ 19615.5000 |
| 1000+ | $38.5602 | $ 38560.2000 |
