| Manufacturer | |
| Mfr. Part # | APT32F120J |
| EBEE Part # | E87077489 |
| Package | SOT-227B-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 33A 960W 320mΩ@10V,25A 4V@25A 1 N-channel SOT-227B-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $168.4750 | $ 168.4750 |
| 200+ | $67.2235 | $ 13444.7000 |
| 500+ | $64.9771 | $ 32488.5500 |
| 1000+ | $63.8670 | $ 63867.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MICROCHIP APT32F120J | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 33A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 320mΩ@10V,25A | |
| Power Dissipation (Pd) | 960W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@25A | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF@1200V | |
| Input Capacitance (Ciss@Vds) | 18200pF@1200V | |
| Total Gate Charge (Qg@Vgs) | 560nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $168.4750 | $ 168.4750 |
| 200+ | $67.2235 | $ 13444.7000 |
| 500+ | $64.9771 | $ 32488.5500 |
| 1000+ | $63.8670 | $ 63867.0000 |
