| Manufacturer | |
| Mfr. Part # | 2N3439U4 |
| EBEE Part # | E83202196 |
| Package | SMD-3P |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 350V 800mW 40@20mA,10V 1A NPN SMD-3P Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $707.5828 | $ 707.5828 |
| 200+ | $273.8264 | $ 54765.2800 |
| 500+ | $264.2019 | $ 132100.9500 |
| 1000+ | $259.4483 | $ 259448.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datasheet | MICROCHIP 2N3439U4 | |
| RoHS | ||
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Collector Current (Ic) | 1A | |
| Power Dissipation (Pd) | 800mW | |
| Collector Cut-Off Current (Icbo) | 2uA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 350V | |
| DC Current Gain (hFE@Ic,Vce) | 40@20mA,10V | |
| Transition Frequency (fT) | - | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@50mA,4mA | |
| Transistor type | NPN |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $707.5828 | $ 707.5828 |
| 200+ | $273.8264 | $ 54765.2800 |
| 500+ | $264.2019 | $ 132100.9500 |
| 1000+ | $259.4483 | $ 259448.3000 |
