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MDD(Microdiode Semiconductor) MMBT5551


Manufacturer
Mfr. Part #
MMBT5551
EBEE Part #
E8408396
Package
SOT-23
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
160V 300mW 80@1mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
This materials supports customized cables!
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973550 In Stock for Fast Shipping
973550 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
50+$0.0124$ 0.6200
500+$0.0100$ 5.0000
3000+$0.0082$ 24.6000
6000+$0.0073$ 43.8000
24000+$0.0067$ 160.8000
51000+$0.0063$ 321.3000
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TypeDescription
Select All
CategoryTransistors/Thyristors ,Bipolar (BJT)
DatasheetMDD(Microdiode Semiconductor) MMBT5551
RoHS
Operating Temperature-55℃~+150℃
TypeNPN
Collector - Emitter Voltage VCEO160V
Current - Collector(Ic)600mA
Number1 NPN
Pd - Power Dissipation300mW
DC Current Gain300
Emitter-Base Voltage(Vebo)6V
Current - Collector Cutoff50nA
Vce Saturation(VCE(sat))200mV
Transition frequency(fT)300MHz

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