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MDD(Microdiode Semiconductor) MMBT5551-E


Manufacturer
Mfr. Part #
MMBT5551-E
EBEE Part #
E841371418
Package
SOT-23
Customer #
Datasheet
EDA Models
ECCN
-
Description
160V 300mW 80@1mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
This materials supports customized cables!
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458050 In Stock for Fast Shipping
458050 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
10+$0.0099$ 0.0990
100+$0.0081$ 0.8100
300+$0.0071$ 2.1300
3000+$0.0061$ 18.3000
6000+$0.0056$ 33.6000
9000+$0.0053$ 47.7000
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TypeDescription
Select All
CategoryTransistors/Thyristors ,Bipolar (BJT)
DatasheetMDD(Microdiode Semiconductor) MMBT5551-E
RoHS
Operating Temperature-55℃~+150℃
TypeNPN
Collector - Emitter Voltage VCEO160V
Current - Collector(Ic)600mA
Number1 NPN
Pd - Power Dissipation300mW
DC Current Gain300
Emitter-Base Voltage(Vebo)6V
Current - Collector Cutoff50nA
Vce Saturation(VCE(sat))250mV
Transition frequency(fT)300MHz

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