5% off
| Manufacturer | |
| Mfr. Part # | MDD7N65F |
| EBEE Part # | E85299405 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 7A 100W 1.4Ω@10V,3.5A 4V@250uA 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2760 | $ 1.3800 |
| 50+ | $0.2021 | $ 10.1050 |
| 150+ | $0.1784 | $ 26.7600 |
| 500+ | $0.1489 | $ 74.4500 |
| 2000+ | $0.1357 | $ 271.4000 |
| 5000+ | $0.1278 | $ 639.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MDD(Microdiode Semiconductor) MDD7N65F | |
| RoHS | ||
| RDS(on) | 1.4Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.09nF | |
| Gate Charge(Qg) | 20.7nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2760 | $ 1.3800 |
| 50+ | $0.2021 | $ 10.1050 |
| 150+ | $0.1784 | $ 26.7600 |
| 500+ | $0.1489 | $ 74.4500 |
| 2000+ | $0.1357 | $ 271.4000 |
| 5000+ | $0.1278 | $ 639.0000 |
