5% off
| Manufacturer | |
| Mfr. Part # | MDD4N65F |
| EBEE Part # | E85299403 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 32W 2.8Ω@10V,2A 4V@250uA 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1840 | $ 0.9200 |
| 50+ | $0.1409 | $ 7.0450 |
| 150+ | $0.1244 | $ 18.6600 |
| 500+ | $0.1037 | $ 51.8500 |
| 2000+ | $0.0946 | $ 189.2000 |
| 5000+ | $0.0891 | $ 445.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MDD(Microdiode Semiconductor) MDD4N65F | |
| RoHS | ||
| RDS(on) | 2.8Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 32W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 600pF | |
| Gate Charge(Qg) | 12nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1840 | $ 0.9200 |
| 50+ | $0.1409 | $ 7.0450 |
| 150+ | $0.1244 | $ 18.6600 |
| 500+ | $0.1037 | $ 51.8500 |
| 2000+ | $0.0946 | $ 189.2000 |
| 5000+ | $0.0891 | $ 445.5000 |
