5% off
| Manufacturer | |
| Mfr. Part # | MDD2N65D |
| EBEE Part # | E85299401 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 2A 35W 5.2Ω@10V,1A 4V@1A 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1021 | $ 0.5105 |
| 50+ | $0.0806 | $ 4.0300 |
| 150+ | $0.0698 | $ 10.4700 |
| 500+ | $0.0617 | $ 30.8500 |
| 2500+ | $0.0525 | $ 131.2500 |
| 5000+ | $0.0493 | $ 246.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | MDD(Microdiode Semiconductor) MDD2N65D | |
| RoHS | ||
| RDS(on) | 5.2Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 338pF | |
| Gate Charge(Qg) | 10.2nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1021 | $ 0.5105 |
| 50+ | $0.0806 | $ 4.0300 |
| 150+ | $0.0698 | $ 10.4700 |
| 500+ | $0.0617 | $ 30.8500 |
| 2500+ | $0.0525 | $ 131.2500 |
| 5000+ | $0.0493 | $ 246.5000 |
